全耗尽绝缘层上硅技术及生态环境简介

Introduction to Fully Depleted Silicon on Insulator Technology and Its Ecosystem

随着半导体技术节点微缩到3 nm及以下,晶体管的尺寸难以进一步缩小,导致了成本优势的减小。功能性和功耗成为物联网、可穿戴设备、汽车电子等应用的主要关注点,为满足这些需求,全耗尽绝缘层上硅(Fully Depleted Silicon on Insulator,FDSOI)技术被进一步研发和产品化。对FDSOI技术的特点和生态环境进行了总结。FDSOI利用体偏置平衡功耗与性能,采用应力优化提高迁移率,通过减薄硅膜厚度抑制短沟道效应并减小寄生电容,因此被应用到低功耗处理器、低噪声放大器、嵌入式存储器等低功耗产品。FDSOI具有巨大的市场潜力,将成为半导体技术一个重要的发展方向。

With the technology node scales down to 3 nm and below,the transistor sizes can be hardly shrunk,resulting in the narrowing of cost advantage.Main attention has been drawn to the functionality and power dissipation for applications such as internet of things,wearable devices,and automotive electronics.To meet these requirements,fully depleted silicon on insulator(FDSOI)has been further investigated and commercialized.The FDSOI technology and its ecosystem are summarized.FDSOI uses body bias to implant trade-off of power dissipation and performance,adopts stress optimization to enhance mobility,and thins the thickness of silicon to suppress short channel effect and reduce the parasitic capacitance,thus it is applied to low-power applications such as low-power processor,low-noise amplifier and embedded memory.FDSOI has great market potential and will become one of the important trends of semiconductor technology.