PVT法制备SiC单晶的研究进展

Research Progress on the Growth of SiC Single Crystal via PVT Method

碳化硅(SiC)作为第三代半导体材料,具有相比于第一、二代半导体更优异的特性,在微电子、光电子等领域有着重要的应用价值。制备得到高质量、大尺寸的SiC单晶是实现其产业应用的前提。PVT法生长SiC单晶是现今的主流生长方法。总结了PVT法生长SiC单晶的四个主要影响因素的研究进展,拟在寻找未来的研究和发展方向。

As a third-generation semiconductor material,silicon carbide(SiC)has more excellent properties than the first and second-generation semiconductors,and has important application value in microelectronics,optoelectronics and other fields.The preparation of high-quality,large-size SiC single crystals is the premise for realizing its industrial application.The PVT method growth SiC single crystal is the mainstream growth method today.This paper summarizes the research progress of four main factors affecting the PVT method growth of SiC single crystal,intends to find the future research and development direction in this field.