摘要
重点阐述和总结了近年来面向高性能氧化铪基铁电材料和器件的先进调控技术,包括应力调控、氧空位调控、界面微结构调控以及尺寸调控等。通过电极材料对铁电薄膜施加拉伸应力以提高其铁电性能,应力工程为先进2D/3D结构铁电存储器(FRAM)开发提供了重要的技术手段;氧空位的存在降低了铁电相与稳定相之间的能量差从而稳定铁电相;界面微结构调控有效减少界面副反应和缺陷;尺寸调控可以限制晶粒大小、改善均匀性。这些调控技术不仅能显著提高单一铁电器件的稳定性和可靠性,还将在改善铁电存储阵列均匀性、铁电多值存储特性等方面发挥重要的作用。
Advanced adjustment technologies for high-performance HfO;-based ferroelectric materials and devices in recent years are investigated and summarized,including stress adjustment,oxygen vacancy adjustment,interface micro-structure adjustment and size adjustment.The existence of the electrode materials can introduce tensile stress on the ferroelectric films and improve its ferroelectric performance.The stress engineering plays an important role in developing advanced 2D/3D ferroelectric random access memory(FRAM).The oxygen vacancy reduces the energy difference between ferroelectric phase and ground phase,thus stabilizing the ferroelectric phase.Interface microstructure ajustment helps to effectively reduce the interface side reactions and defects.The particle size and homogeneity can be optimized by size manipulation.These adjustment technologies can efficiently improve the stability and reliability of the single ferroelectric device.Moreover,they can be potentially used to enhance the homogeneity and muti-value memory properties of ferroelectric memory arrays in the future.
作者
郭志愿
邱飞龙
倪金玉
赵毅
Guo Zhiyuan;Qiu Feilong;Ni Jinyu;Zhao Yi(China Nanhu Academy of Electronics and Information Technology,Jiaxing 314002,China;Institute of Advanced Technology,University of Science and Technology of China,Hefei 230026,China;College of Information Science and Electronic Engineering,Zhejiang University,Hangzhou 310027,China)
出处
《半导体技术》
CAS
北大核心
2022年第5期337-345,共9页
Semiconductor Technology
基金
科技创新2030——“新一代人工智能”重大项目(2020AAA0109001)
中央高校基本科研业务费专项资金资助项目(2020XZZX005-06)。
