掺杂硅和金属通孔结构电迁移对比研究

Comparison Study of Electromigration Between Doped Silicon and Metal with Via Structure

对多种掺杂硅结构和金属通孔结构进行了电迁移测试。实验结果表明,在相同电流和温度下的掺杂单晶硅的电迁移性能更好,有金属硅化物的掺杂单晶硅阻值更稳定,有金属硅化物的掺杂多晶硅的电迁移性能优于金属的电迁移性能。而无金属硅化物的掺杂多晶硅由于载流子及焦耳热效应表现出更严重的阻值退化。分析了不同掺杂硅结构的电迁移失效机理,同时对无金属硅化物的多晶硅电迁移的阻值退化模型进行了量化分析并取得较好的拟合效果。

Electromigration(EM)tests were carried out on various doped silicon structures and metals with via structures.The experimental results show that at the same current and temperature,the EM performance of doped monocrystalline silicon is better,the resistance of doped monocrystalline silicon with metal silicide is more stable,and the EM performance of doped polysilicon with metal silicide is better than that of metal.However,the doped polysilicon without metal silicide shows more severe resistance degradation due to the carrier and Joule heat effect.EM failure mechanisms of different doped silicon structures were analyzed.At the same time,the resistance degradation model of polysilicon without metal silicide during EM was quantitatively analyzed,and a good fitting result was obtained.