碳化硅晶片的化学机械抛光技术研究进展

Research progress of chemical mechanical polishing technology of silicon carbide wafer

为实现碳化硅晶片的高效低损伤抛光,提高碳化硅抛光的成品率,降低加工成本,对现有的碳化硅化学机械抛光技术进行了总结和研究。针对碳化硅典型的晶型结构及其微观晶格结构特点,简述了化学机械抛光技术对碳化硅材料去除的影响。重点综述了传统化学机械抛光技术中的游离磨料和固结磨料工艺以及化学机械抛光的辅助增效工艺。同时从工艺条件、加工效果、加工特点及去除机理4个方面归纳了不同形式的化学机械抛光技术,最后对碳化硅的化学机械抛光技术的未来发展方向进行了展望,并对今后研究的侧重点提出了相关思路。

In order to achieve high-efficiency and low-damage polishing of silicon carbide wafer,improve the yield rate of silicon carbide polishing,and reduce processing costs,the existing silicon carbide chemical mechanical polishing technologies were summarized and researched.In view of the typical crystal structure of silicon carbide and its microscopic lattice structure,the effect on the removal of silicon carbide material was briefly described.The focus was on the free abrasive and fixed abrasive processes in traditional chemical mechanical polishing technology and the auxiliary synergistic process of chemical mechanical polishing.At the same time,different forms of chemical mechanical polishing were summarized from the four aspects of process conditions,processing effects,processing characteristics and removal mechanisms.Finally,the future development direction of the chemical mechanical polishing technology of silicon carbide was prospected and relevant ideas were put forward for the focus of future research.