SHJ电池用单晶硅绒面织构及界面钝化工艺研究

Study on Single Crystal Silicon Wool Texture and Interface Passivation Process for SHJ Solar Cell

采用(100)晶向N型抛光单晶硅衬底,研究氢氧化钠与IPA混合溶液体系对单晶硅片各向异性腐蚀过程,通过优化氢氧化钠质量浓度、IPA体积含量、溶液温度和腐蚀时间等影响参量,制备出反射率10.65%的金字塔绒面结构;采用PECVD沉积技术制备非晶硅钝化层,优化硅烷沉积浓度,在6%的硅烷浓度下制备出光敏性在10^(5)非晶硅钝化层,硅片少子寿命为951μs。利用上述优化参数,制备出开路电压(Voc)为0.64 V,电池效率为16.89%的SHJ太阳能电池。

The(100)crystal-to-N-type polished single crystal silicon substrate is used to study the anisotropic etching process of single crystal silicon wafer by sodium hydroxide and IPA mixed solution system.By optimizing the affecting parameters such as the mass concentration of sodium hydroxide,the volume content of IPA,the solution temperature and the corrosion time,a pyramidal suede structure with a reflectivity of 10.65%is prepared.By adopting the PECVD deposition technique to prepare the amorphous silicon passivation layer,optimize the silane deposition concentration,and the amorphous silicon passivation layer with photosensitivity of 105 is prepared at 6%silane concentration.The silicon wafer minority carrier lifetime is 951μs.Using the above optimized parameters,a SHJ solar cell with open circuit voltage(Voc)of 0.64 V and cell efficiency of 16.89%is prepared.