硅通孔阻挡层抛光液的研究现状和发展趋势

Research Status and Development Trend in Polishing Slurry for Through Silicon Via Barrier Layer

硅通孔(TSV)阻挡层化学机械抛光(CMP)是实现TSV晶圆全局平坦化的关键技术之一,配置多功能、高效率的抛光液是提升CMP效果的重要环节。总结了目前国内外TSV阻挡层抛光液的研究现状;研究了TSV Ta基阻挡层抛光过程中Cu、Ta和氧化层的去除速率选择比及抛光后晶圆的表面质量;通过改变TSV阻挡层抛光液中络合剂、氧化剂和缓蚀剂等成分,可以控制Cu、Ta和氧化层的去除速率选择比,修正Cu层上的碟形坑,实现TSV晶圆的全局平坦化;最后指出开发新型的Co基和Ru基阻挡层抛光液,研制绿色环保的Ta基阻挡层抛光液产品,将成为TSV阻挡层抛光液未来研究的主要方向。

Through silicon via(TSV)barrier layer chemical mechanical polishing(CMP)is one of the key technologies to achieve global planarization of TSV wafers.The configuration of a multifunctional and efficient slurry is an important link to improve the CMP effect.The current research status of TSV barrier layer slurry at home and abroad is summarized.The removal rate selection ratio of Cu,Ta and oxide layers in the polishing process of TSV Ta-based barrier layer and the surface quality of the wafer after polishing are studied.By changing the complexing agent,oxidant,corrosion inhibitor and other components in the TSV barrier layer slurry,the removal rate selection ratio of Cu,Ta and oxide layers can be controlled,the dishing on the Cu layer can be corrected,and the global planarization of the TSV wafer can be realized.Finally,it is pointed out that the development of new Co-based and Ru-based barrier layer slurry and the development of green Ta-based barrier layer slurry will become the main research directions of the TSV barrier layer slurry in the future.