Au纳米颗粒结构参数优化制备高性能纳米晶存储器

Fabrication of High Performance Nanocrystal Memory by Optimizing Structure Parameters of Au Nanoparticles

高性能纳米晶存储器是下一代非易失性存储器的潜在候选者,而纳米颗粒结构参数严重影响纳米晶存储器的性能。结合射频磁控溅射和快速热退火技术制备了四组不同平均尺寸和数密度的Au纳米颗粒,颗粒平均尺寸为4.6~17.3 nm,数密度为1.4×10^(11)~1×10^(12)cm^(-2)。而后在此基础上以Au纳米颗粒作为器件的存储层,制备了四组Al/TaN/HfO_(2)/Au-纳米晶(NC)/SiO_(2)/Si结构的纳米晶存储器,研究并分析了不同结构参数Au纳米颗粒对器件存储性能的影响。结果表明,当Au纳米颗粒平均尺寸约为8 nm、数密度约为6.3×10^(11)cm^(-2)时,纳米晶存储器在±12 V的扫描电压范围内获得了高达11.8 V的存储窗口,存储容量最大,且预计器件在10年后的电荷损失率约为24%,具有较好的电荷保持特性。

High performance nanocrystal memory is a potential candidate for the next generation of non-volatile memory.However,the performance of nanocrystal memory is seriously affected by the structure parameters of nanoparticles.Four groups of Au nanoparticles with different average sizes in the range of 4.6-17.3 nm and number densities in the range of 1.4×10^(11)-1×10^(12)cm^(-2)were fabricated by the combination of radio-frequency magnetron sputtering and rapid thermal annealing techniques.Then,on this basis,four groups of Al/TaN/HfO_(2)/Au-nanocrystal(NC)/SiO_(2)/Si structure nanocrystal memories with Au nanoparticles as the storage layer of the device were prepared,and the effects of different structure parameters of Au nanoparticles on the memory performance of the device were studied and analyzed.The results show that the nanocrystal memory achieves a maximum memory window of up to 11.8 V in the scanning voltage range of±12 V when the average size of Au nanoparticle is about 8 nm and the number density is about 6.3×10^(11)cm^(-2).Moreover,the memory shows good charge retention characteristics with an estimated charge loss rate of about 24%after 10 years.