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一种基于VCM开关切换的12位20 MS/s SAR ADC 被引量:2

A VCM-Based 12 bit 20 MS/s SAR ADC
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摘要 设计了一种12位、采样率为20 MS/s的逐次逼近型模数转换器(SAR ADC)。整体电路为全差分结构,采用了一种基于VCM开关切换的分段式电容阵列。同时,比较器结合了前置运放和动态锁存器,与异步时序相配合,实现了SAR ADC高速工作。此外,采样电路采用栅压自举技术,提高采样的线性度。芯片基于TSMC 180 nm 1P5M CMOS工艺设计。仿真结果表明,当采样率为20 MS/s时,SAR ADC有效位数为11.94 bit,无杂散动态范围为86.53 dBc,信噪比为73.66 dB。 A 12-bit successive approximation register analog to digital converter(SAR ADC) with a sampling rate of 20 MS/s was designed. The whole circuit was a fully differential structure, and a segmented capacitor array utilizing VCM-based switching scheme was used. At the same time, the comparator combined the pre-amplifier with the dynamic latch, so the SAR ADC achieved high speed operation with asynchronous timing. In addition, the sampling circuit adopted the bootstrapped switch to improve the linearity of sampling. The chip was designed in a TSMC 180 nm 1 P5 M CMOS process. The simulation results showed that when the sampling rate was 20 MS/s, the effective number of bit of the SAR ADC was 11.94, the spurious free dynamic range was 86.53 dBc, and the SNR was 73.66 dB.
作者 张辉柱 甘泽标 曹超 周莉 ZHANG Huizhu;GAN Zebiao;CAO Chao;ZHOU Li(School of Microelectronics,Shandong University,Jinan 250101,P.R.China)
出处 《微电子学》 CAS 北大核心 2022年第2期276-282,共7页 Microelectronics
基金 国家自然科学基金资助项目(62004115) 山东省自然科学基金委资助项目(ZR2020QF023)。
关键词 逐次逼近型模数转换器 VCM开关切换 分段式电容阵列 SAR ADC VCM-based switching split-array capacitor
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  • 1LIUCC, CHANGSJ, HUANGG. Y, etal. A 10- bit 50-MS/s SAR ADC with a monotonic capacitor switching procedure [J]. IEEE J Sol Sta Cite, 2010, 45(4) .- 731-740.
  • 2ZHUY, CHAN C H, CHIO U F, et al. A 10-bit 100-MS/s reference-free SAR ADC in 90 nm CMOS [J].IEEE J Sol Sta Circ, 2010, 45(6): 1111-1121.
  • 3FAN H, HAN X, WEI Q, et al. A 12-bit self- calibrating SAR ADC achieving a nyquist 90.4-dB SFDR[J]. Analog Integr Circ ~ Signal Process, 2013, 74(1): 239-254.
  • 4ZHU Z M, QIU Z, LIU M L, et al. A 6-to-10-bit 0. 5 V-to-0.9 V reconfigurable 2 MS/s power scalable SAR ADC in 0.18 tLm CMOS [J]. IEEE Trans Circ & SystI: Regu Pap, 2015, 62(3): 689-696.
  • 5SANYAL A, SUN N. An energy-efficient low frequency-dependence switching technique for SAR ADCs[J]. IEEE Trans Circ & Syst II: Expr Briefs, 2014, 61(5).. 294-298.
  • 6ABO A M, GRAY P R. A 1.5-V, 10-bit, 14.3-MS/s CMOS pipeline analog-to-digital converter [J]. IEEE J Sol Sta Circ, 1999, 34(5): 599-606.
  • 7LIN Y Z, LIU C C, HUANG G Y, et al. A 9-bit 150- MS/s subrange ADC based on SAR architecture in 90- nm CMOS [J]. IEEE Trans Circ & Syst I: Regu Pap, 2013, 60(3).- 570-581.
  • 8VERMA N, CHANDRAKASAN A P. An ultra-low energy 12 bit rate resolution-scalable SAR ADC for wireless sensor nodes [J]. IEEE J Sol Sta Circ, 2007, 42(6), 1196-1205.
  • 9WANG Z, LIN R, GORDON E, et al. An in-situ temperature-sensing interface based on a SAR ADC in 45 nm LP digital CMOS for the frequency-temperature compensation of crystal oscillators [C] ff IEEE ISSCC. San Francisco, CA, USA. 2010: 316-317.
  • 10KANG J J, FLYNN M P. A 12 b 11 MS/s successive approximation ADC with two comparators in 0.13 Um CMOS [C] // Syrup VLSI Circ. Kyoto, Japan. 2009: 240-241.

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