基于微同轴三维金属结构应用的厚胶光刻工艺

Thick Photoresist Lithography Based on 3D Metal Micro-coaxial Structure Application

微同轴三维金属结构具有超宽带、无色散、低损耗、高功率容量、高隔离度和小体积的特点,应用于导航、通信、雷达等众多领域。厚胶光刻工艺是微同轴三维金属结构制备的关键工艺。通过对一款负性光刻胶开展厚胶光刻工艺研究,优化了厚胶光刻中的匀胶、前烘和曝光工艺,解决了厚胶光刻工艺中容易出现的均匀性差、胶膜破裂的问题,实现了厚度110μm,分辨率30μm的厚胶图形的制备,达到了微同轴三维金属结构制备的工艺指标要求。

3D metal micro-coaxial structure has good application prospects in navigation,communication and radar systems due to its advantages of ultra wide band,zero dispersion,low loss,high power,high isolation and small volume.As the key step for the 3D metal micro-coaxial structure,thick negative photoresist lithography is studied in detail.The key technical issues of homogeneity and crack of the thick photoresist flims are solved by optimizing the spin-coating,prebaking and exposure processes.As a result,the thick photoresist patterns with a thickness of 110μm and a resolution of 30μm are fabricated,and this process can meet the requirements of the 3D metal micro-coaxial structure.