摘要
提出了一种超低功耗复位电路结构,以微电流源提供偏置,利用器件自身的开启电压为触发点,并通过正反馈进行加速,实现了上电和下电复位功能,3.3 V电源供电时电流小于1μA,在NMOS和PMOS管阈值电压之和附近产生可靠的复位信号。以华润微电子0.25μm 5 V工艺实现电路版图并流片,面积小于0.001 mm^(2),典型复位电压为1.95 V。解决了常用复位电路可靠性低、没有低压复位功能、成本高等问题。
An ultra-low power reset circuit structure is proposed to realize the power-on and power-off reset functions,with the micro current source to providing bias,the device's own turn-on voltage as the trigger point,and positive feedback acceleration.The current is less than 1μA with 3.3 V power supply.A reliable reset signal is generated near the sum of threshold voltage of NMOS and PMOS transistors.The circuit layout and tape-out are carried out by China Resources Microelectronics 0.25μm 5 V process with an area of less than 0.001 mm^(2) and a typical reset voltage of 1.95 V.It solves the problems of low reliability,no low-voltage reset function and high cost of common reset circuits.
作者
史良俊
袁敏民
SHI Liangjun;YUAN Minmin(Wuxi Etek Micro-Electronic Co.,Ltd.,Wuxi 214028,China)
出处
《电子与封装》
2022年第7期20-24,共5页
Electronics & Packaging
关键词
超低功耗
复位电路
开启电压
正反馈
ultra-low power
reset circuit
turn-on voltage
positive feedback