片上SRAM物理不可克隆函数特性优化设计

Optimal Design of Physically Unclonable Function Characteristics of on-Chip SRAM

业内常用静态随机存储器(SRAM)物理不可克隆函数(PUF)通过片上SRAM上电初始状态的固有物理特性生成系统安全密钥。但在系统不能充分掉电的情况下,片上集成SRAM上电后保持了上次掉电前的状态,无法生成固有的物理特性密钥。提出了一种在系统不能充分掉电情况下的电源控制电路,确保SRAM单元充分掉电,从而保证片上SRAM上电初始状态的物理特性。

Physically unclonable function(PUF)of static random access memory(SRAM)is commonly used in the industry to generate system security keys through the inherent physical characteristics of the on-chip SRAM power-up initial state.However,in the case that the system cannot be sufficiently powered down,the on-chip integrated SRAM maintains the state before the last power down after being powered up and cannot generate the inherent physical characteristic key.A power control circuit is proposed to ensure the physical characteristics of the on-chip SRAM power-up initial state by ensuring that the SRAM cell is fully powered down when the system cannot be fully powered down.