过渡金属掺杂GaN基稀磁半导体的研究进展

Progress of Transition Metal Doped GaN Based Diluted Magnetic Semiconductors

阐述稀磁半导体、GaN基稀磁半导体、过渡金属掺杂GaN基稀磁半导体的研究进展,探讨过渡金属掺杂GaN薄膜,可有效增强稀磁半导体的磁性及光电性。

This paper describes the research progress of diluted magnetic semiconductors, GaN Based Diluted Magnetic Semiconductors and transition metal doped GaN based diluted magnetic semiconductors. It discusses the transition metal doped GaN film, which can effectively enhance the magnetic and photoelectric properties of diluted magnetic semiconductors.