芯片传导瞬态电磁干扰下的防护特性研究

Research on Protection Characteristics of Chip Under Conducted Transient Electromagnetic Interference

瞬态电压抑制器(TVS)二极管作为常用的抑制瞬态电磁干扰的防护器件,在芯片的防护中有关键作用。文章采用传输线脉冲(TLP)测试方法,对有一定代表性的六款TVS二极管在10~1000 ns五组脉冲宽度、0.5~1800 V的TLP干扰信号作用下的瞬态响应进行了多角度分析。重点研究了工程中常用的三款不同型号的数字芯片和模拟芯片在TVS二级管防护后,受到不同脉宽TLP应力作用下的防护特性。测试结果表明:芯片并联TVS二极管后,多数情况下即使TLP电压达到1800 V,TVS二极管对芯片仍有较好的防护。这种基于不同脉宽特性的研究思路,为不同应用场景的器件防护奠定了基础,实测数据为精确建立TVS仿真模型提供了可能。

Transient voltage suppressor(TVS)diode,as a common protective device to suppress transient electromagnetic interference,plays a key role in chip protection.Using the transmission line pulse(TLP)test method,the transient response of six representative TVS diodes under the action of 10~1000 ns five groups of pulse width,0.5~1800 V TLP interference signal is analyzed from multiple angles.This paper focuses on the protection characteristics of three different types of digital chips and analog chips commonly used in engineering under the TLP stress of different pulse width with the TVS diode protection.The test results show that TVS diodes still have good protection for the chip even if the TLP voltage reaches 1800 V in most cases after the chip is connected in parallel with TVS diodes.This research idea based on different pulse width characteristics lays a foundation for the protection of devices in different application scenarios.The measured data provides the possibility of accurately establishing TVS simulation model.