摘要
Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ions for Ga Sb layer transfer is confirmed.Combining the strain change and the defect evolution,the blistering and exfoliation processes of Ga Sb during annealing is revealed in detail.With the direct wafer bonding,the Ga Sb layer is successfully transferred onto a(100)Si substrate covered by 500-nm thickness thermal oxide SiO_(2)layer.After being annealed at 200℃,the Ga Sb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum(FWHM)of the x-ray rocking curve(XRC).
作者
Ren-Jie Liu
Jia-Jie Lin
Zheng-Hao Shen
Jia-Liang Sun
Tian-Gui You
Jin Li
Min Liao
Yi-Chun Zhou
刘仁杰;林家杰;沈正皓;孙嘉良;游天桂;李进;廖敏;周益春(Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China;Hunan Provincial Key Laboratory of Thin Film Materials and Devices,School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China;College of Information Science and Engineering,Jiaxing University,Jiaxing 314001,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science(CAS),Shanghai 200050,China;Beijing Semicore ZKX Electronics Equipment Co.,Ltd,Beijing 100000,China)
基金
the National Key Research and Development Program of China(Grant No.2017YFE0131300)
the National Natural Science Foundation of China(Grant Nos.U1732268,61874128,11622545,61851406,11705262,61875220,and 61804157)
the Frontier Science Key Program of Chinese Academy of Sciences(Grant Nos.QYZDYSSW-JSC032 and ZDBS-LY-JSC009)
the Chinese–Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)
the Shanghai Science and Technology Innovation Action Plan Program,China(Grant No.17511106202)
the Program of Shanghai Academic Research Leader,China(Grant No.19XD1404600)
the Shanghai Youth Top Talent Program,Shanghai Sailing Program,China(Grant Nos.19YF1456200 and 19YF1456400)
the K.C.Wong Education Foundation,China(Grant No.GJTD2019-11)
the NCBiR within the Polish–China(Grant No.WPC/130/NIR-Si/2018)。
