GaN基近紫外激光器研究现状与进展

Current Status and Advances of GaN-based UV Laser Diodes for Near-UV Wavelength

氮化镓(GaN)基近紫外激光器(UVA LD,320~400 nm)在紫外固化、3D打印以及医疗等领域具有广泛应用。文章首先概述了GaN基UVA LD的国内外研究现状与关键技术挑战,然后分析了如何从外延生长与结构设计的角度,解决AlGaN的应力调控、高效p型掺杂与量子阱中极化电场的抑制等关键问题,以期为进一步实现高功率、低阈值、长寿命GaN基UVA LD的外延生长提供参考。

GaN-based UV laser diodes for near-UV wavelength(UVA LD,320~400 nm)are widely applied in the fields such as UV curing,3 D printing and medical.In this paper,the current status and key technical challenges of GaN-based UVA LD are reviewed,and then how to solve the main challenges of stress management,efficient p-type doping in AlGaN and minimizing polarization effect in multi-quantum wells are analyzed from the epitaxial growth and structural design.This will provide theoretical guidance for the epitaxial growth of the GaN-based UVA LD with high power,low threshold and long life.