高纯铝箔在不同退火加热速率下的晶粒尺寸预测及生长动力学分析

Grain Size Prediction and Growth Thermo-Kinetics Analysis During Annealing with Different Heating Rates for HighVoltage Anode Aluminum Foil

基于电子背散射衍射技术(EBSD)和薄膜材料晶粒生长模型理论,对高压阳极铝箔在不同升温速率下退火的晶粒尺寸及其生长动力学进行了研究。结果表明:依据典型的等温晶粒生长方程,可以计算得出晶粒生长指数n=4,活化能Q_(g)=129 kJ/mol,速率常数K=1.28×10^(-8)m^(4)·s^(-1)。基于薄膜材料的晶粒生长模型和能量各向异性特性,解释了(001)取向晶粒得以快速生长的原因,且发现这些快速生长的晶粒与S晶粒呈40°<111>取向关系。

Based on electron backscattered diffraction(EBSD)and grain growth model of thin film materials,grain sizes and growth thermo-kinetics were investigated during annealing with different heating rates in high-voltage anode aluminum foil.Results show that the grain growth exponent n=4,activation energy Q_(g)=129 kJ/mol and rate constant K=1.28×10^(-8)m^(4)·s^(-1) are calculated by the typical isothermal grain growth equation.Based on grain growth model of thin film materials and energy anisotropy,the reasons for the rapid growth of(001)oriented grains are well explained,and a typical 40°<111>misorientation relationship with S-grains is found.