低余辉碘化铯闪烁晶体的生长与性能研究

Growth and Properties of Low Afterglow Cesium Iodide Scintillation Crystals

低余辉碘化铯晶体的开发对于碘化铯晶体在现代安检及医疗CT设备中的应用具有十分重要的意义。本文首先通过原料纯化处理,去掉对晶体余辉有明显影响的杂质,然后采用共掺杂的方式,以改进的布里奇曼法生长低余辉碘化铯晶体,研究了该晶体的闪烁性能。研究结果表明,该方法获得的碘化铯晶体的余辉值约0.31%@50 ms,远低于常规碘化铯晶体的余辉值。

The development of low afterglow cesium iodide crystal is very important for the application of cesium iodide crystal in modern security check and medical CT equipment.In this paper,low afterglow cesium iodide crystals by co-doping were grown by an improved Bridgman method,with purified raw materials in which impurities influencing crystal afterglow were removed,the scintillation properties of the crystal were studied.The results show that the afterglow value of the crystal obtained by this method is about 0.31%@50 ms,which is much lower than that of conventional cesium iodide crystal.