摘要
在GaN高电子迁移率晶体管(High Electron Mobility Transistors,HEMT)工艺的基础上,成功开发设计了一款Q频段功率放大器芯片。电路使用4级级联放大拓扑,每一级均选定了合适的栅宽,结合Wilkinson功率分配及合成匹配网络来满足输出功率、增益以及功率附加效率(Power Added Efficiency,PAE)等性能指标要求。测试结果表明,该芯片在37~42 GHz频段内的输出功率大于40 dBm,功率附加效率大于30%。
Based on the GaN High Electron Mobility Transistors(HEMT)process,a Q-band power amplifier chip was successfully developed and designed.The circuit uses a four-stage cascaded amplification topology,and the appropriate gate width is selected for each stage,combined with the Wilkinson power distribution and synthesis matching network to meet the performance requirements of output power,gain,and Power Added Efficiency(PAE).The test results show that the output power of the chip is greater than 40 dBm in the band of 37~42 GHz,and the power added efficiency is greater than 30%.
作者
王海龙
崔亮
WANG Hailong;CUI Liang(th Research Institute of China Electronic Technology Corporation,Shijiazhuang 050000,China)
出处
《通信电源技术》
2022年第8期66-68,共3页
Telecom Power Technology
