摘要
基于InGaAs/InP雪崩光电二极管,讨论吸收层厚度和少子寿命以及倍增层厚度和少子寿命对暗电流的影响。研究表明,吸收层厚度影响热产生复合(shockley-read-hall, SRH)和缺陷辅助隧穿(trap-assisted tunneling, TAT)暗电流大小,而倍增层厚度则对TAT和直接隧穿(band-band tunneling, BBT)暗电流影响较大。少子寿命可以等效为缺陷的影响,因而对与缺陷相关的SRH和TAT暗电流影响较大。对暗电流机理的分析,为研究低暗电流高信噪比的雪崩器件提供良好的理论预测。
This paper investigates the influence of thickness and minority carrier lifetime of multiplication layer and absorption layer on dark current, based on InGaAs/InP avalanche photodiode. Results demonstrated that the thickness of absorption layer mainly affects shockley-read-hall(SRH) and trap-assisted tunneling(TAT) dark currents, while the thickness of the multiplication layer mainly affects TAT and band-band tunneling(BBT) dark currents. The minority carrier lifetime, equivalent to the defects effect, plays a role in SRH and TAT dark currents. Analysis of dark current mechanisms could provide a well theoretical prediction for avalanche devices with low dark current and high signal-to-noise ratio.
作者
李阳俊
邓艳
骆志刚
王文娟
Li Yangjun;Deng Yan;Luo Zhigang;Wang Wenjuan(College of Physics and Mechatronic Engineering,Jishou University,Jishou,Hunan 416000,China;Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;School of Physics and Chemistry,Hunan First Normal University,Changsha,Hunan 410205,China)
出处
《应用激光》
CSCD
北大核心
2022年第4期181-185,共5页
Applied Laser
基金
国家自然科学基金项目(61865006)
湖南省自然科学基金项目(2019JJ50481)
湖南省教育厅优秀青年项目(18B324)
吉首大学校级科研项目(Jdy20036)。
