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基于光导开关的激光二极管触发三电极气体开关研究 被引量:3

LD triggered three-electrode gas switch based on photoconductive semiconductor
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摘要 为实现激光二极管对气体开关的触发,采用从主回路开关两侧取电的基于光导开关一体化激光二极管触发气体开关结构,并对基于光导开关一体化激光二极管触发三电极气体开关进行了初步实验,实现了激光二极管输出能量83μJ条件下40 kV/8 kA三电极气体开关的可靠触发,证明了技术可行性。但实验中的实测光导开关的工作寿命仅约数百次。 To trigger the gas switch with one fiber,a kind of LD(laser diode)triggered three--electrode gas switch based on photoconductive semiconductor without trigger charger source is presented in this paper.The principle of this switch is that a GaAs PCSS,which is triggered by LD,is used to control the trigger pulse generation of the trigger capacitor discharge circuit(CDC).The capacitor in CDC is charged with the energy of the main circuit directly.As a result,this switch can work without trigger charge power source,which means this switch can be made more compact compared with traditional electrical trigger switch.A prototype designed for three-electrode gas switch working under 40 kV/8 kA and PCSS triggered with 83μJ laser energy is described in this paper in detail.The experimental result proves the feasibility of the switch.The experimental result also shows the life of the photoconductive semiconductor is just several hundred shots.The life of the photoconductive semiconductor will be improved in next phase of our research.
作者 付佳斌 王凌云 何泱 冯传均 谢卫平 Fu Jiabin;Wang Lingyun;He Yang;Feng Chuanjun;Xie Weiping(Key Laboratory of Pulse Power,Institute of Fluid Physics,CAEP,P.O.Box 919-108,Mianyang 621900,China;Graduate School of China Academy of Engineering Physics,Beijing 100088,China)
出处 《强激光与粒子束》 CAS CSCD 北大核心 2022年第9期44-49,共6页 High Power Laser and Particle Beams
基金 国家自然科学基金项目(52007176) 国防技术基础科研项目(JSJL2018212A001)。
关键词 气体开关 激光二极管触发 光导开关 工作寿命 gas switch LD trigger photoconductive semiconductor work life
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  • 1刘锡三.高功率脉冲技术[M]北京:国防工业出版社,2005376-380.
  • 2Lee C H. Picosecond optoelectronic switching in GaAs[J].Applied Physics Letters,1977,(02):84-86.
  • 3Nunnally W C. Critical component requirements for compact pulse power system architectures[J].IEEE Transactions on Plasma Sciences,2005,(04):1262-1267.
  • 4Mourou G,Staneampiano C V,Blumenthal D. Picosecond microwave pulse generation[J].Applied Physics Letters,1981,(06):470-472.
  • 5Schoenberg J H,Burger J W,Tyo J S. Ultra-wideband source using gallium arsenide photoconductive semiconductor switches[J].IEEE Transactions on Plasma Sciences,1997,(02):327-334.
  • 6Zutavern F J,Armijo J C,Cameron S M. Optically activated switches for low jitter pulsed power applications[A].2003.591-594.
  • 7Stygar W,Cuneo M E,Headley D I. Architecture of petawatt-class Z-pinch accelerators[J].Physical Review,2007,(03):1-24.
  • 8Loubriel G M,O' Malley M W,Zutavern F J. Toward pulsed power uses for photoconductive semiconductor switches:Closing switches[A].1987.145-148.
  • 9Williamson S,Albrecht G F,Mourou G. Laser triggered Cr:GaAs HV sparkgap with high trigger sensitivity[J].Review of Scientific Instruments,1982,(06):-867-870.
  • 10Sun Yanliang,Shi Shunxiang,Zhu Yanwu. A new phenomenon in GaAs photoconductive semiconductor triggered by laser diode[J].Microwave and Optical Technology Letters,2007,(09):2232-2234.

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