均一亚微米级氧化铈抛光粉的制备

Preparation of homogeneous sub-micron cerium oxide polishing powder

为得到均一的亚微米级二氧化铈(CeO_(2))抛光粉,以六水合硝酸铈(Ce(NO_(3))_(3)·6H_(2)O)为原料,以醇-水混合溶液为溶剂,采用溶剂热法合成CeO_(2)。改变Ce^(3+)浓度和醇-水体积比,利用X射线衍射仪(XRD)、激光粒度分布仪、扫描电子显微镜(SEM)对CeO_(2)的物相组成和形貌特征进行表征,分析CeO_(2)粒子的形成过程。将合成的CeO_(2)用于6H-SiC晶片Si面的化学机械抛光(chemical mechanical polishing,CMP),利用原子力显微镜(atomic force microscopy,AFM)和电子天平得出CeO_(2)的抛光性能。结果表明:Ce^(3+)浓度为0.10 mol/L,醇-水体积比为3∶1时合成的CeO_(2)的形貌规则、晶粒尺寸适中且粒度分布均匀。采用其抛光后,晶片表面粗糙度Ra为0.243 nm,材料去除速率d_(MRR)为287 nm/h。合成的CeO_(2)适用于化学机械抛光。

To obtain homogeneous submicron cerium dioxide(CeO_(2))polishing powder,CeO_(2)was synthesized by sol-vothermal reaction using cerium nitrate(Ce(NO_(3))_(3)·6H_(2)O)as cerium resource and alcohol-water mixed solution as solvent.The phase composition and morphology of CeO_(2)were characterized by X-ray diffraction(XRD),laser particle size analyzer and scanning electron microscope(SEM).The formation process of CeO_(2)particles was analyzed by chan-ging the concentration of Ce^(3+)and alcohol-water ratio.The synthesized CeO_(2)was used for chemical mechanical polish-ing(CMP)Si-face of 6H-SiC.The polishing characteristics were tracked by atomic force microscopy(AFM)and elec-tronic balance.The results indicates that when the Ce^(3+) concentration is 0.10 mol/L and alcohol/water volume ratio is 3∶1,the as-prepared particles have regular morphology,moderate particle size and uniform particle size distribution.After polished by using the as-prepared CeO_(2),the Ra of wafer surface reached 0.243 nm and the d_(MRR) 287 nm/h.The as-prepared CeO_(2) can be used for chemical mechanical polishing.