氧氩比对镓掺杂氧化锌薄膜晶体管性能的影响

Effect of oxygen-argon ratio on the performance of gallium-doped zinc oxide thin film transistors

在室温条件下使用射频磁控溅射设备在100 nm热氧化SiO_(2)上沉积镓掺杂氧化锌(GZO)薄膜,并制备成薄膜晶体管器件.研究薄膜沉积过程中氧氩比对GZO薄膜及器件的影响.使用紫外可见分光光度计表征薄膜的光学特性,通过扫描电子显微镜(SEM)和原子力显微镜(AFM)观察薄膜的表面形貌.实验结果表明,不同氧氩比条件沉积的GZO薄膜在可见光区的平均透过率均在90%以上.合适的氧氩比可以降低氧空位缺陷,使薄膜的陷阱态密度最小,当氧氩比为10∶90时GZO器件的电学性能达到最佳,迁移率为0.82 cm^(2)/Vs,阈值电压为5.01 V,亚阈值摆幅为2.51 V/dec,开关电流比达到1.27×10^(7).

Using RF magnetron sputtering equipment at room temperature to deposit gallium-doped zinc oxide(GZO)film on 100 nm thermally oxidized SiO_(2),and fabricate it into thin film transistor devices.Study the effect of oxygen-argon ratio on GZO film and devices during the film deposition process.Using an ultraviolet-visible photometer to characterize the optical properties of the film,and observe the surface morphology of the film by scanning electron microscope(SEM)and atomic force microscope(AFM).The experimental results show that the average transmittance of GZO films deposited under different oxygen-argon ratio conditions in the visible light region is above 90%.A suitable oxygen-argon ratio can reduce oxygen vacancy defects,minimize the density of trap states of the film,when the oxygen-argon ratio is 10∶90,the electrical performance of the GZO device reaches the best,and the mobility is 0.82 cm 2/Vs,the threshold voltage is 6.4 V,the subthreshold swing is 2.51 V/dec,and the switch current ratio reaches 1.27×10^(7).