4.5kV高压快恢复二极管的Spice子电路设计

Study on Spice Subcircuit of 4.5kV High Voltage Fast Recovery Diode

阐述基于4.5kV高压快恢复二极管,采用集总电荷法搭建了高压快恢复二极管的等效子电路,探讨LTSpice仿真软件进行测试仿真,通过双脉冲电路对模型参数进行调整,使得到的子模型能够完整地描述高压快恢复二极管的特性。通过与常温与高温实测波形进行比对,证实Spice子电路对描述二极管器件特性的可行性,提出的子电路模型,对于高压快恢复二极管的系统仿真和器件结构仿真,具有参考价值。

In this paper, the equivalent subcircuit of 4.5kV high voltage fast recovery diode is constructed by lumped charge method. LTSpice simulation software was used to test the simulation, and the parameters of the model were adjusted by the double pulse circuit, so that the sub-model could describe the characteristics of the high voltage fast recovery diode completely. Finally, the feasibility of the proposed SPICE subcircuit in describing the characteristics of diode devices is verified by comparison with the measured waveforms of a chip at room temperature and high temperature. It shows that the proposed spice subcircuit model has a reference value for the system simulation and internal simulation of high voltage fast recovery diodes.