鳍工艺的自对准四重图形化技术研究与应用

Development of the Fin Self-Aligned Quadruple Patterning Process

阐述CMOS技术进入深纳米工艺节点,鳍式场效应晶体管以其优异的电学性能成为目前的主流器件。当工艺发展到Fin周期小于40nm时,开展自对准四重图形化技术研究,以实现场效应晶体管的鳍结构显得尤为重要。探讨北方华创公司的NMC 612D刻蚀机,开发了完整的鳍自对准四重图形化集成工艺流程,优化了关键刻蚀工艺。研究得到的形貌优化后具有24nm周期的鳍透射电子显微镜(TEM)截面图显示,所得鳍结构的特征尺寸均匀性、线宽/线边粗糙度和周期漂移等关键工艺指标都达到要求。

When CMOS technologies entered nanometer scales, FinFET has become one of the most promising devices because of its superior electrical characteristics. With the size of semiconductor manufacturing shrinking continuously, the self-aligned quadruple patterning(SAQP) technique has been widely used in fin patterning process with Fin pitch smaller than 40nm. In our study, we develop the entire integrated process flow of SAQP, and tune the key etch processes with etch tool NMC 612D NAURA Technology Group Co., Ltd.. Through the TEM cross section images, we first show the finely tuned profile of fin structure which pitch is 24nm. The key process performance can meet targets such as critical dimension uniformity, line edge/width roughness and pitch walking.