摘要
The investigation of the new generation of a photovoltaic cell for the optimized parameters is mainly carried out using modeling and simulation,because the fabrication of quantum structures is still a challenge.Hence,new models to simulate realistic devices are developed.In the past,the Drift Diffusion equation has been exploited to simulate quantum well solar cells by introducing various assumptions and new parameters.Non Equilibrium Green Function’s Formalism has been widely used to study the transport in the nanostructures of the photovoltaic devices.We have developed a model of simulating quantum dot(QD)p-i-n junction solar cell by hybridizing the Drift Diffusion Equation and the Transfer Hamiltonian Approach.The developed model is applied to a QD p-i-n junction solar cell to determine the optimized position of the QD within the intrinsic region.Our results show that when the QD is placed closer to the edges of the i-region,the highest possible efficiency is observed.
