氮化镓功率器件塑封工艺技术研究

Research of GaN Device Plastic Packaging Process Technology

随着科技的发展,集成电路封装的形式和材料面临着巨大挑战。氮化镓(GaN)作为最具潜力的第三代半导体材料,在射频通信领域的应用前景广阔。传统的金属或陶瓷GaN封装制造成本高、工艺复杂、品质控制难,开发环氧树脂封装的GaN射频器件,使之具备高散热性和高可靠性,实现进口产品的同类替代,是当前我国集成电路封测产业的一项重要任务。以一款GaN功率器件双边扁平无引脚封装(Dual Flat Nolead,DFN)为例,介绍GaN器件的封装结构设计、塑封材料选择、封装工艺优化以及封测中常见的问题分析与解决等内容。

With the development of science and technology,the forms and materials of integrated circuit packaging are facing great challenges.GaN as the most promising third generation semiconductor material has a broad application prospect in the field of RF communication,the traditional metal or ceramic GaN package has high manufacturing cost,complex process and difficult quality control,the development of epoxy resin package GaN RF devices,so that they have high heat dissipation and high reliability,to achieve similar imported products.This paper takes a GaN power device DFN package as an example and introduces the package structure design,plastic sealing material selection,package process optimization,analysis and solution of common problems in packaging and testing of GaN devices.