摘要
The family of[M(dmit)_(2)]-salts(dmit2-=2-thioxo-1,3-dithiole-4,5-dithiolate;M=Ni,Pd and Pt)generally show novel magnetic,elec-tric,magnetoelectric and photoelectric properties.Herein,a blockwall-type layered[Me3S][Ni(dmit)_(2)]radical salt(1;Me3S+=trime-thylsulfonium)was prepared and characterized by microanalysis,IR spectroscopy,thermal analysis,powder and single crystal X-ray diffraction techniques.Salt 1 crystalizes in triclinic space group P-1,with two pairs of[Ni(dmit)_(2)]-and Me3S+ions in an asymmetric unit.The anions form blockwall-type monolayer,being parallel to crystallographic(011)plane,and the cations are accommodated in the spaces of anion monolayer.Salt 1 features a two-dimensional S=1/2 antiferromagnetic(AFM)spin system withθ=-97.8(1)K and a semiconductor withσ≈10-4 S·cm^(-1) and activation energy Ea=0.24(1)eV in 308-368 K.1 shows two-step dielectric relaxa-tions ranged from 173-373 K and 1-107 Hz for the dipole motions of two different polar cations.Most importantly,the dielectric constant of 1 reaches to~17,with high-κnature.This study suggests the possibility of achieving high-K materials by introducing po-lar and low rotation barrier components into van der Waals crystal and high-K[Ni(d m it)_(2)]--based electrode materials for applications in supercapacitors.
基金
supported by the Priority Academic Program Development of Jiangsu Higher Education Institutions and the National Natural Science Foundation of China(21801218 and 22073047).
