SiC MOSFET偏压温度不稳定性阈值电压测试方法研究

Research on Threshold Voltage Test Method in Bias Temperature Instability of SiC MOSFET

SiC MOSFET阈值电压漂移问题是器件可靠性面临的主要挑战,阈值电压测量的准确性对于评估器件在偏压与温度应力下的阈值电压稳定性极为重要。围绕偏压与温度应力下SiC MOSFET阈值电压测试的问题,分析SiC MOSFET阈值电压漂移特性的影响因素,介绍国外偏压温度不稳定性评估标准的现状,对标准中所有测试方法均进行详细分析,分类归纳总结现有测试方法,分析各类测试方法的优缺点。

SiC MOSFET threshold voltage drift is a major challenge to device reliability,so the accuracy of threshold voltage measurement is extremely important for evaluating the bias temperature instability.This paper focuses on the problem of threshold voltage testing of SiC MOSFETs under bias voltage and temperature stress,analyzes the influencing factors of the threshold voltage drift characteristics of SiC MOSFETs,introduces the foreign standards’ current status of bias temperature instability evaluation,and analyzes all the test methods in the standard in detail.Finally,paper categorizes and summarizes the existing test methods,analyzes both advantages and disadvantages of various test methods.