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面向独热编码的有限状态机抗单粒子翻转设计 被引量:4

Anti-SEU Design for Finite State Machine with One-hot Encoding
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摘要 在空间高能粒子影响下,电路容易发生单粒子翻转,而在电路设计中处于核心地位的有限状态机一旦受到单粒子翻转影响,可能无法进行正常的状态转移,从而导致有限状态机失去数据控制功能。为此,面向独热编码的有限状态机进行了抗单粒子翻转设计,并以航空全双工交换以太网中的入队数据总线控制模块作为验证模型,通过故障注入验证了设计方法的正确性。最后对该设计进行了可靠性评估,结果表明相比于传统的三模冗余加固方法,该方法的失效概率降低了两个数量级,此外还能根据实际需求调整纠正位数。相比于编码方式,该方法采用的逻辑更简单,更便于设计人员的开发和使用,具有较强的实用性。 Under the influence of high-energy particles in space,the circuit is susceptible to single event upset(SEU),and the finite state machine(FSM),which plays a key role in circuit design,may not be able to carry out normal state transition once affected by SEU,resulting in the loss of data control.To deal with this problem,the anti-SEU design is carried out for the FSM with one-hot encoding.Two fault injection schemes are designed by using the enqueue data bus control module in the Avionics Full Duplex Switched Ethernet(AFDX)as the verification model,and through fault injection,the correctness of the design method is verified.Finally,the reliability of the design is evaluated.The results show that compared with that of the traditional triple modular redundancy(TMR)reinforcement method,the failure probability of this method is reduced by two orders of magnitude,and the correction number can be adjusted according to the actual demand.Compared with the coding method,the logic adopted by this method is simpler,and it is more convenient for designers to develop and use,so this method has a stronger practicability.
作者 王鹏 邓智 范毓洋 WANG Peng;DENG Zhi;FAN Yuyang(Key Laboratory of Civil Aircraft Airworthiness Technology,Civil Aviation University of China,Tianjin 300300,China;Sino-European Institute of Aviation Engineering,Civil Aviation University of China,Tianjin 300300,China)
出处 《电讯技术》 北大核心 2022年第8期1178-1183,共6页 Telecommunication Engineering
基金 航空科学基金(20182667009)。
关键词 有限状态机(FSM) 独热码 单粒子翻转(SEU) 可靠性评估 finite state machine(FSM) one-hot code single event upset(SEU) reliability evaluation
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  • 1赵建超,于伦正.空间粒子辐射引起存储单元多位比特纠错方案[J].微机发展,2005,15(12):154-156. 被引量:1
  • 2武文杰,刘皓,李少谦.基于FPGA的支持切换Bank的SDRAM控制器设计[J].信息技术,2006,30(1):33-36. 被引量:7
  • 3Underwood C I,Oldfield M K.Observations on the reliability of COTS-Device-Based solid state data recorders operating in Low-Earth orbit[J].IEEE Trans Nucl Sci,2000,NS-47:647-653.
  • 4Craig Hafer,Jonathan Mabra,Duane Slocum,et al.Next generation radiation-hardened SRAM for space applications[C].IEEEAC Dec,2005.
  • 5Maiz J,Hareland S,Zhang K,Armstrong P.Characterization of multi-bit soft error events in advanced SRAMs[J].IEDM Tech.Dig,Dec.2003:519-522.
  • 6Daniele Radaelli,Helmut Puchner,Skip Wong and Sabbas Daniel.Investigation of multi-bit upsets in a 150 nm technology SRAM device[J],IEEE Trans Nucl Sci,2005,52(6):2433-2437.
  • 7Tipton A D,Pellish J A,Reed R A,Schrimpf R D,Weller R A,Mendenhall M H,Sierawski B,Sutton A K,Diestelhorst R M,Espinel G,Cressler J D,Vizkelethy G.Multiple bit upset in 130 nm CMOS technology[J].IEEE Trans.Nucl.Sci.,2006,53(6):3259-3264.
  • 8Gill B,Nicolaidis M,Papachristou C,Wolff F,Garverick S.An efficient BICS design for SEUs detection and correction in semiconductor memories[C].Design Automation and Test Conference in Europe (DATE-05),2005.
  • 9Balkaran Gill,Michael Nicolaidis,Chris Papachristou.Radiation Induced Single-word multiple-bit upsets correction in SRAM[C].Proceedings of the 11th IEEE International On-Line Testing Symposium (IOLTS'05),2005.
  • 10Shu Lin,Daniel J.Costello Jr.Error Control Coding Second Edition[M].ISBN 0-13-042672-5,2004.

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