铟掺杂对氮化镓热导率的影响

Effect of Indium Doping on Thermal Conductivity of Gallium Nitride

使用铟(In)掺杂氮化镓(GaN)可以调制其许多性质,从而使其广泛地应用于各种领域。在应用过程中,材料的热导率是至关重要的性质,直接关系到器件的稳定性,因此对In掺杂GaN的热导率进行研究是十分必要的。本文使用第一性原理方法求解玻尔兹曼输运方程研究了In掺杂对GaN热导率的影响,结果表明掺入In之后,GaN的热导率明显降低,且其光学声子分支和声学声子分支对热导率的变化也发生了一定的改变。研究结果可以为GaN基半导体器件的设计提供理论指导。

Doping with In atom can modulate many properties of gallium nitride,which makes it widely used in various fields.In the application process,the thermal conductivity of materials is a crucial property,which directly relates to the stability of devices.Therefore,it is necessary to study the thermal conductivity of In-doped GaN.In this paper,the effect of In doping on the thermal conductivity of GaN is studied by solving Boltzmann transport equation with first-principles method.The results show that the thermal conductivity of GaN decreases obviously after In doping,and the contribution of optical phonon branchs and acoustic phonon branchs to thermal conductivity are changed.The research results can provide theoretical guidance for the design of GaN-based semiconductor devices.