摘要
为研究薄膜热电偶动态响应特性的影响机制,选用不同基底厚度的In_(2)O_(3)/ITO薄膜热电偶为研究对象。基于理论分析,通过COMSOL软件建立薄膜热电偶的传热模型,对被测薄膜热电偶的温度场分布和动态响应进行有限元分析。搭建以半导体激光器为热源的高温动态标定系统,对三种厚度的薄膜样件进行了动态标定实验。当激光脉宽为10 ms时,100,500,1000μm厚度的薄膜热电偶的时间常数为2.38,4.97,9.17 ms。实验结果证明:薄膜热电偶的动态特性受基底厚度的影响,为薄膜热电偶设计参数的优化、动态特性的提升和后期制备提供了理论依据。
In order to study on influence mechanism of dynamic response characteristics of thin film thermocouple,In_(2)O_(3)/ITO film thermocouple with different substrate thickness is selected as the research object.Based on theoretical analysis,heat transfer model for thin film thermocouple is established by COMSOL software to conduct finite element analysis of the temperature field distribution and dynamic response of the measured thin film thermocouple.A high temperature dynamic calibration system with semiconductor laser as heat source is built to calibrate three kinds of thickness of thin films.When the laser pulse width is 10 ms,the time constants of thin film thermocouple with 100,500 and 1000μm thickness are 2.38,4.97 and 9.17 ms.The experimental results show that the dynamic characteristics of thin film thermocouple are affected by the thickness of the substrate,which provides a theoretical basis for the optimization of the design parameters of thin film thermocouple,the improvement of the dynamic characteristics and the later preparation.
作者
张杰
王高
李志玲
刘云东
梁海坚
黄漫国
ZHANG Jie;WANG Gao;LI Zhiling;LIU Yundong;LIANG Haijian;HUANG Manguo(State Key Laboratory of Dynamic Measurement Technology,North University of China,Taiyuan 030051,China;Department of Electronic Engineering,Taiyuan Institute of Technology,Taiyuan 030051,China;Aviation Science and Technology Key Laboratory of Special Sensor Technology for State Monitoring,Beijing Great Wall Aviation Measurement and Control Technology Institute,Beijing 100022,China)
出处
《传感器与微系统》
CSCD
北大核心
2022年第8期37-40,44,共5页
Transducer and Microsystem Technologies
基金
国家自然科学基金资助项目(62106238)
山西省基础研究计划资助项目(20210302124541)
山西省基础研究计划资助项目(202103021224337)
山西省研究生创新资助项目(2021Y579)。
关键词
薄膜热电偶
半导体激光器
基底厚度
动态特性
thin film thermocouple
semiconductor laser
base thickness
dynamic characteristics