X波段氮化镓高效率功率放大器MMIC

X Band High Efficiency Power Amplifier MMIC Based on GaN HEMT Technology

基于0.25μm栅长的GaN高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)工艺,采用三级放大拓扑电路结构,研制出了一款X波段宽带GaN高效率功率放大器芯片。使用LoadPull测试方法得到了GaN HEMT管芯的最佳输出效率和最佳输出功率匹配的阻抗位置。输出匹配和级间匹配结构均使用损耗较低的电抗结构,以提高功率效率。测试结果表明,该放大器在8~12 GHz频段内,小信号增益>30dB,脉冲饱和输出功率达到22 W,全频段附加效率>51%,9.5 GHz最高效率达到57%。

Based on the GaN High Electron Mobility Transistor(HEMT)process with a gate length of 0.25μm and a three-stage amplification topology circuit structure,an X-band broadband GaN high-efficiency power amplifier chip has been developed.The optimal output efficiency and optimal output power impedance position of the GaN HEMT die were obtained using the LoadPull test method.Both output matching and interstage matching structures use lower loss reactive structures to improve power and efficiency.The test results show that in the 8~12 GHz frequency band,the small signal gain of the amplifier is>30 dB,the pulse saturation output power reaches 22 W,the full frequency band additional efficiency is>51%,and the maximum efficiency at 9.5 GHz reaches 57%.