消除外延衬底中心圈缺陷的晶片清洗工艺研究及应用

Technical Study and Application of Wafer Cleaning for elimination of Defects of Extensional Substrate Central Circle

针对全自动清洗机清洗的晶片,长外延后衬底易出现中心圈缺陷的问题,采取含有机溶剂乙醇的SC1清洗液、含双氧水和氨水的有机溶液SC2和有机溶液SC3溶液等六个步骤清洗晶片的自动清洗工艺,达到了消除外延衬底中心圈缺陷的效果。

Defects are easy to occur on the long extended back substrate of wafer in fully automatic cleaning machine,therefore,the cleaning fluid SC1 with organic solvent ethyl alcohol,the organic solvent SC2 with hydrogen peroxide and ammonia,the organic solvent SC3 and the other six steps were adopted for automatic cleaning process of wafer,defects of extensional substrate central circle were eliminated.