一种高集成双向隧穿场效应晶体管

A Highly Integrated Bidirectional Tunneling Field Effect Transistor

在现有矩形栅极U形沟道场效应晶体管与深肖特基势垒场效应晶体管的基础上,提出一种高集成双矩形栅极U形沟道双向隧穿场晶体管。新设计利用更高的肖特基势垒来最小化热电子发射电流,并采用矩形主栅极产生强大的带带隧穿电流作为正向电流的传导机制;引入一个矩形辅助栅极,以有效阻止反向偏置漏电流。新设计可在不使用掺杂工艺的情况下,获得更低的亚阈值摆幅、更小的反向漏电流、更高的I_(on)/I_(off)比和更高的集成度,在更小的芯片面积上实现更优越的性能。

Based on the existing rectangular gate U-channel field effect transistor and deep Schottky barrier field effect transistor,a highly integrated double rectangular gate U-channel bidirectional tunneling field transistor is proposed.In the new design,a higher Schottky barrier is used to minimize the thermionic emission current,and a rectangular main gate is used to generate a strong band-to-band tunneling current as the conduction mechanism of the forward current.A rectangular auxiliary gate is introduced to effec-tively prevent reverse bias leakage current.The new design can achieve lower subthreshold swing,lower reverse leakage current,higher I_(on)/I_(off) ratio and higher integration without doping process,and achieve better performance in smaller chip area.