双肖特基势垒型异或非可重构场效应晶体管研究

Research on an XNOR Reconfigurable Field Effect Transistor with Bilayer Schottky Barrier

为在现有RFET产品基础上寻求改进,设计提出一种高集成的双肖特基势垒型异或非可重构场效应晶体管(BSBRFET),不同于传统异或非门电路,只用单个晶体管即可实现异或非逻辑门功能。采用完全肖特基接触,屏蔽掉热电子发射电流,以带带隧穿电流作为正向导通机制;引入浮动源极来存储、积累电荷。遵循BSBRFET工作原理和输出特性一致性,在实验中对其异或非功能做出验证。与传统RFET相比,此器件能实现更低的亚阈值摆幅、更小的反向偏置电流、更高的开关电流比,在能够实现NXOR逻辑功能同时,对于提高输出特性一致性也具有优势。

In order to improve the existing RFET products,a highly integrated double Schottky barrier XNOR reconfigurable field effect transistor(BSBRFET)is designed and proposed.Different from the traditional XNOR gate circuit,only a single transistor can realize the XNOR logic gate function.Thermionic emission current is shielded by full Schottky contact,and band-to-band tunneling current is used as the forward conduction mechanism.A floating source is introduced to store and accumulate charges.According to the working principle of BSBRFET and the consistency of its output characteristics,its XNOR function is verified in the experiment.Compared with the traditional RFET,the device can achieve lower subthreshold swing,smaller reverse bias current and higher switching current ratio,which not only can realize NXOR logic function,but also has advantages in improving the consistency of output characteristics.