酸浸去除硅中Ti杂质的研究

STUDY ON REMOVAL OF Ti IMPURITY FROM SILICON BY ACID LEACHING

介绍了利用酸浸的方法去除硅中金属杂质Ti的实验研究,对比了在HF的作用下H_(2)SO_(4)、HCl对硅中金属杂质Ti的去除效果,并探讨了在HF的作用下不同浓度的H_(2)SO_(4)、HCl对Ti去除效果的影响。综合得出10%HCl+5%HF的共同作用可有效去除硅中的金属杂质Ti。并在此基础上讨论了酸洗时间和酸洗温度对Ti去除的影响。结果表明:酸浸温度为45℃,酸浸时间为30 min时在5%HF+10%HCl的共同作用下金属杂质Ti的去除率达到了98.68%。

The paper introduces the experiment on the removal of metal impurity Ti from silicon by acid leaching method,compares the removal effects of H_(2)SO_(4) and HCl on metal impurity Ti from silicon under the action of HF,and meanwhile discusses the effects of different concentrations of H_(2)SO_(4) and HCl on the removal of Ti.It is concluded that the combined effect of 10%HCl+5%HF can effectively remove Ti from metal impurity silicon.And on the basis,the effects of pickling time and pickling temperature on the removal Ti are discussed.The results show that when the acid leaching temperature arrives at 45℃and the acid leaching time lasts 30 min,the removal rate of metal impurity Ti reaches 98.68%under the combined effect of 5%HF+10%HCl.