Sb掺杂二氧化钛光电极的制备与性能研究

Preparation and properties of Sb doped titanium dioxide photoelectrode

采用水热法制备了Sb掺杂的二氧化钛纳米棒(Sb-TNR)光电极材料,分析了TNR和Sb掺杂TNR的微观结构和光电化学性能。结果表明,Sb部分取代了TNR中Ti的位点,从而形成Sb均匀掺杂的Sb-TNR晶体结构。TNR和Sb-TNR具有较好的光电流稳定性,且Sb掺杂有助于提升电荷转移效率和提高光电催化效率与光电活性,Sb-TNR具有更好的光电化学性能。掺杂Sb的TNR的光电流密度要高于未掺杂Sb的TNR,且掺杂5%Sb的TNR具有最高的光电流密度,即具有最佳的光电响应特性。

Sb doped titanium dioxide nanorods(Sb-TNR) are prepared by hydrothermal method.The microstructure and photoelectrochemical properties of TNR and Sb-TNR are compared and analyzed.The results show that Sb will partially replace Ti sites in TNR,thus forming Sb uniformly doped Sb-TNR crystal structure.Both TNR and Sb-TNR are n-type semiconductors, and have good photocurrent stability.Sb doping helps to improve charge transfer efficiency, photocatalytic efficiency and photoelectric activity.Sb-TNR has better photoelectrochemical properties than TNR.The photocurrent density of Sb-TNR is higher than that of TNR without Sb.Sb-TNR containing 5% of Sb has the highest photocurrent density, meaning the best photoelectric response characteristics.