非卤离子溶剂热构筑高质量一维Sb_(2)S_(3)单晶

Non-halide solvothermal architecture of high-quality one-dimensional Sb_(2)S_(3) single crystals

硫化锑(Sb_(2)S_(3))具有独特的一维结构和显著的光电特性,因而在光电领域中得到广泛关注和研究,然而高质量一维Sb_(2)S_(3)单晶报道较少。使用氧化锑乳液替代卤化锑,通过水热法制备了高质量的一维Sb_(2)S_(3)单晶,避免了卤素阴离子对晶体界面的自刻蚀影响,减少了晶体的界面缺陷并提高了界面稳定性。实验结果证实了一维Sb_(2)S_(3)单晶在300~800 nm的宽光谱范围内表现出良好的光吸收性能。在28.17μW·cm^(-2)(532 nm LED)的照射下,基于Sb_(2)S_(3)单晶的探测器具有较好的光响应度(334.4 A·W^(-1))和比探测率(3.44×10^(12)Jones)。认为非卤离子溶剂热制备的Sb_(2)S_(3)晶体在新型光电器件领域具有较好的应用前景。

Antimony sulfide(Sb_(2)S_(3))has a unique one-dimensional structure and remarkable optoelectronic property and has received extensive attention and research in the field of optoelectronics.However,there are few reports of high-quality one-dimensional Sb_(2)S_(3)single crystals.In this work,antimony oxide emulsion is used to prepare high-quality one-dimensional Sb_(2)S_(3)single crystals by hydrothermal method rather than antimony halide,which avoids the self-etching effect of halogen anions on the crystal interface,reduces the interface defects,and further improves the crystal interface stability.The results confirmed that the one-dimensional Sb_(2)S_(3)single crystal exhibited good light absorption performance in a wide spectral range of 300~800 nm.The detector based on Sb_(2)S_(3)single crystal has good photoresponsivity(334.4 A·W^(-1))and specific detectivity(3.44×10^(12)Jones)at a power density of 28.17μW·cm^(-2)of a 532 nm LED.Sb_(2)S_(3)crystals prepared by non-halide hydrothermal method have promising applications in the field of novel optoelectronic devices.