期刊文献+

A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs

原文传递
导出
摘要 We propose a deterministic solver for the time-dependent multi-subband Boltzmann transport equation(MSBTE)for the two dimensional(2D)electron gas in double gate metal oxide semiconductor field effect transistors(MOSFETs)with flared out source/drain contacts.A realistic model with six-valleys of the conduction band of silicon and both intra-valley and inter-valley phonon-electron scattering is solved.We propose a second order finite volume method based on the positive and flux conservative(PFC)method to discretize the Boltzmann transport equations(BTEs).The transport part of the BTEs is split into two problems.One is a 1D transport problem in the position space,and the other is a 2D transport problem in the wavevector space.In order to reduce the splitting error,the 2D transport problem in the wavevector space is solved directly by using the PFC method instead of splitting into two 1D problems.The solver is applied to a nanoscale double gate MOSFET and the current-voltage characteristic is investigated.Comparison of the numerical results with ballistic solutions show that the scattering influence is not ignorable even when the size of a nanoscale semiconductor device goes to the scale of the electron mean free path.
出处 《Communications in Computational Physics》 SCIE 2011年第7期305-338,共34页 计算物理通讯(英文)
基金 supported by the NKBRP(Grants 2006CB302705,2005CB321704) the NSFC(Grants 10701005,11011130029) sponsored by SRF for ROCS,SEM.
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部