摘要
第三代半导体材料SiC具备熔点高、硬度大、稳定性好等特点,其制备工艺需要开发一些独特的工艺装备,主要涉及SiC单晶生长、衬底制备、外延生长和离子注入机及高温氧化炉等芯片制程关键装备。根据SiC技术及产业的发展特点,分析了当前SiC工艺设备特点及应用现状,展望了设备的未来发展趋势。
The third generation semiconductor material SiC has the characteristics of high melting point,high hardness and good stability,some unique process equipment needs to be developed in its preparation process,mainly involving SiC single crystal growth,substrate preparation,epitaxial growth,ion implantation machine,high temperature oxidation furnace and other key equipment in chip manufacturing process.According to the development characteristics of SiC technology and industry,the characteristics and application status of current SiC process equipment are analyzed,and the future development trend of equipment is prospected.
作者
杨金
巩小亮
何永平
YANG Jin;GONG Xiaoliang;HE Yongping(The 48th Research Institute of CETC,Changsha 410111,China)
出处
《电子工业专用设备》
2022年第3期8-13,共6页
Equipment for Electronic Products Manufacturing
关键词
碳化硅
单晶生长
外延
芯片制程
SiC
Single crystal growth
Epitaxy
Chip process
