金属基极紫外光刻胶

Metal-based extreme ultraviolet photoresist

由于具有光源波长短(13.5 nm)、图案化分辨率高等优点,极紫外(extreme ultraviolet,EUV)光刻技术被认为是突破5 nm甚至是3 nm半导体芯片制程节点的关键技术,与之相对应的EUV光刻胶研发广受关注。但传统的基于聚合物体系的化学放大光刻胶(chemical amplified resist,CAR)因尺寸过大、对EUV吸收低,限制了其在EUV光刻技术的应用进程。部分含有d轨道电子的金属元素具有高的EUV吸收截面,在光刻胶分子中引入这些金属元素可以有效提高对EUV的灵敏度。通过分子设计制备尺寸小、EUV吸收高的金属基光刻胶材料是解决EUV光刻胶服役性能问题的有效途径,已得到了广泛的研究。本文按金属氧簇(MOCs)、金属氧化物纳米粒子(NP)、金属-有机小分子(MORE)进行分类,对目前国内外的EUV光刻胶研究进展进行总结,并对EUV光刻胶未来所面临的机遇和挑战进行了展望。

Due to advantages of short exposure wavelength(13.5 nm)and high patterning resolution,extreme ultraviolet(EUV)lithography is the state-of-the-art technology to break through the 3 nm process node in integrated circuit.The corresponding EUV photoresist has drawn considerable attention.However,conventional chemically amplified resists(CAR)based on polymer systems are large in size and show low EUV sensitivity,which greatly limit their application process in EUV lithography.The introduction of metals containing d-orbital electrons into the photoresist molecules can effectively enhance the sensitivity to EUV light.Therefore,it is one of the effective ways to improve the EUV service performance by developing metal-based photoresists of small size and high EUV absorption through molecular design.This paper summarizes the current research progress of metalbased EUV photoresist,including metal-oxo clusters(MOCs),nanoparticles(NPs)and molecular organometallic resists for EUV(MORE),and prospect the further development and challenge of EUV photoresist.