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Recent advances of defect-induced spin and valley polarized states in graphene

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摘要 Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling,which can support a series of broken symmetry states.Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale,and hence,lead to rich quantum states,highlighting promising directions for spintronics and valleytronics.In this article,we mainly review the recent scanning tunneling microscopy(STM)advances on the spin and/or valley polarized states induced by an individual atomicscale defect in graphene,including a single-carbon vacancy,a nitrogen-atom dopant,and a hydrogen-atom chemisorption.Lastly,we give a perspective in this field.
作者 张钰 贾亮广 陈瑶瑶 何林 王业亮 Yu Zhang;Liangguang Jia;Yaoyao Chen;Lin He;Yeliang Wang(School of Integrated Circuits and Electronics,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Beijing Institute of Technology,Beijing 100081,China;Advanced Research Institute of Multidisciplinary Sciences,Beijing Institute of Technology,Beijing 100081,China;Center for Advanced Quantum Studies,Department of Physics,Beijing Normal University,Beijing 100875,China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第8期48-56,共9页 中国物理B(英文版)
基金 financial supported by the National Natural Science Foundation of China(Grant Nos.92163206 and 61725107) the National Key Research and Development Program of China(Grant No.2020YFA0308800) Beijing Natural Science Foundation(Grant No.Z190006) China Postdoctoral Science Foundation(Grant No.2021M700407)。
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