Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

Hexagonal boron nitride(h-BN)films are synthesized by dual temperature zone low-pressure chemical vapor deposition(LPCVD)through using a single ammonia borane precursor on non-catalytic c-plane Al_(2)O_(3)substrates.The grown films are confirmed to be h-BN films by various characterization methods.Meanwhile,the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied.It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different.The growth rates of the h-BN thin films show their decreasing trends with the rearward position,while the crystal quality is improved.This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.