微弱磁场测量的各向异性磁电阻传感器

Anisotropic Magnetoresistance Sensor for Weak Magnetic Field Measurement

该文介绍了一种利用半导体标准工艺制作的Ni Fe薄膜AMR传感器,并着重对电阻变化率关于0磁场对称特性进行了研究。论文详细介绍了利用两次磁控溅射获得传感器的四层结构,并对其进行了在变化磁场下电阻变化率的测量,通过对比未加入barber电极的对照组,由测试结果得出采用了barber电极的传感器成功改善了传感器在微弱磁场下的线性度,使其在-15-15Oe大小的磁场下的R2值为0.9976,使器件具有与集成电路芯片集成的性能。

In this paper,a NiFe thin film AMR sensor fabricated by semiconductor standard process is introduced,and the symmetry of resistance change rate with respect to 0 magnetic field is studied.In this paper,the four layer structure of the sensor obtained by two magnetron sputtering is introduced in detail,and its resistance change rate under changing magnetic field is measured.By comparing the control group without barber electrode,the test results show that the sensor with barber electrode successful y improves the linearity of the sensor under weak magnetic field,so that its value is 0.9976 under-15-15oe magnetic field,The device has the performance of integration with integrated circuit chip.