摘要
针对无片外电容低压差线性稳压器瞬态响应差的问题,本文提出了一种摆率增强电路,该设计采用了动态密勒补偿技术,使得低压差线性稳压器有良好的环路稳定性。本文基于SilTerra公司的标准0.18μm的CMOS工艺,通过最终的仿真,该设计的低压差线性稳压器在负载电流20 mA~200μA的瞬态变化下过冲电压仅有80 mV,恢复时间0.5μs,线性调整率与负载调整率的最大值分别为0.036%、6.4%。降低了低压差线性稳压器输出的过冲电压以及恢复时间,实现了具有高瞬态响应的无片外电容低压差线性稳压器。
In view of the problem of the poor transient response of cap-free low-dropout regulator(LDO),a swing rate-enhanced circuit is proposed in this paper,which reduces the overshoot voltage and recovery time of the LDO output.The design adopts the dynamic Miller compensation technology,which makes the LDO loop more stable.This design is based on SilTerra′s standard 0.18μm CMOS technology.The final simulation experiment shows that when the transient load current is within the range from 20 mA to 200μA,the LDO overshoot voltage is only 80 mV,the recovery time is 0.5μs,the maximum linear adjustment ratio is 0.036%,and the load adjustment ratio is 6.4%.This design makes the LDO without an off-chip capacitor and with a high transient response a reality.
作者
刘云涛
王博涛
方硕
王云
郑鲲鲲
LIU Yuntao;WANG Botao;FANG Shuo;WANG Yun;ZHENG Kunkun(College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China;Key Laboratory of Advanced Marine Communication and Information Technology,Ministry of Industry and Information Technology,Harbin Engineering University,Harbin 150001,China;Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China)
出处
《哈尔滨工程大学学报》
EI
CAS
CSCD
北大核心
2022年第8期1186-1191,共6页
Journal of Harbin Engineering University
基金
国家自然科学基金重大科研仪器研制项目(62027814)
黑龙江省自然科学基金面上项目(JJ2018ZR1021)
中央高校基本科研业务费专项资金项目(3072021CF0806).
关键词
瞬态响应
无片外电容
低压差线性稳压器
摆率增强
动态米勒补偿
过冲电压
调整率
恢复时间
transient response
cap-free
low-dropout regulator
swing rate enhanced
dynamic Miller compensation
overshoot voltage
adjustment rate
recovery time