太赫兹波导封装技术的研究与应用

The Study and Application of Terahertz Waveguide Package

对太赫兹波导封装技术进行研究,并在D波段(110~170 GHz)和220 GHz频段分别进行设计验证.通过金丝键合技术对研制的D波段放大器芯片进行波导封装设计,封装测试结果为:封装模块在139 GHz测试得到最大增益为10.8 dB,在137~144 GHz频率范围内,增益大于7.8 dB,输入端回波损耗优于5 dB,输出端回波损耗优于8.5 dB.封装与在片测试结果曲线变化趋势基本一致,但是封装后芯片性能恶化严重,封装损耗大于5 dB.基于此,开展太赫兹波导-集成探针过渡结构研究,提出一种适用于太赫兹频段的波导-集成探针过渡结构,并在220 GHz频段进行设计验证.模块测试结果为:在208~233 GHz频带范围内,插入损耗优于3 dB,回波损耗优于8 dB,在224 GHz频点处,获得该结构的最优性能,其插入损耗为1.3 dB,回波损耗为46.4 dB.该波导-集成探针过渡结构为太赫兹频段全集成芯片研制提供了经验.

Research on terahertz waveguide packaging technology and design verification in D-band(110~170 GHz)and 220 GHz band,respectively.Based on the wire bonding method,D-band LNA module is developed with self-designed amplifier chip.The module measurement shows the peak gain is 10.8 dB at 139 GHz,the gain higher than 7.8 dB from 137 GHz to 144 GHz,the measured input return loss and output return loss are better than 5 dB and 8.5 dB in operating frequencies,respectively.The tendency of packaged curve is same as the on-chip measured and its value is worse than the onchip measurement about 5 dB.A waveguide-to-integrated probe transition structure for terahertz band is proposed and verified in 220 GHz.The module measurement shows the return loss is better than 8 dB and the insertion loss is better than 3 dB during 208 GHz to 233 GHz and the best performance is achieved at 224 GHz with insertion loss is 1.3 dB and return loss is 46.4 dB.The waveguide-to-integrated probe transition structure provides experience for development of fully integrated terahertz chip.