摘要
Spintronics,which employs electrons'spin degree of freedom in data storage and transmision,acts as a promising candidate for next-generation information technology owing to its improved processing speed and reduced power consumption.To seek and design materials with highly spin polarized carriers and find an efficient way to control the spin polarization direction of carriers are critical and urgent to spintronics applications.In this aspect,the bipolar magnetic semiconductor(BMS)serves as an ideal solution since it can generate currents with 100%spin polarization,and the direction of spin polarization is easily tunable by an external gate voltage,Up to now,there have been lots of BMSs predicted by first-principles calculations,however,most of them are extrinsically induced by chemical or physical modifications,and a generalized scheme for designing BMS materials is stil lacking,This paper is aimed to briefly review the existing BMS materials designed by theoretical simulations,analyze the main obstacles to experimental realization,and put forward suggestions for future development.
基金
support from Anhui Initiative in Quantum Information Technologies(Grant No.AHY090400)
the Youth Innovation Promotion Association CAS(Grant No.2019441)and USTC Research Funds of the Double First-Class Initiative(Grant No.YD2060002011).
