Ka频段平衡式GaN射频功率放大器芯片

Ka-Band Balanced Gan RF Power Amplifier chip

基于0.15μm GaN赝配高电子迁移率晶体管(Pseudomorphic High Electron Mobility Transistor,PHEMT)工艺,设计研发了一款Ka频段平衡式功率放大器芯片。采用Lange耦合器进行功率合成,放大器使用四级级联放大拓扑结构,同时综合应用三维和平面场仿真技术,提高电路仿真精度。在33~37 GHz频率带宽、24 V偏置以及脉冲波使用条件下,该芯片饱和输出功率大于44 dBm,功率附加效率高于26%。

Based on the 0.15μm GaN Pseudo High Electron Mobility Transistor(PHEMT)process,a Ka-band balanced power amplifier chip was designed and developed.The Lange coupler is used for power synthesis,the amplifier uses a four-stage cascaded amplification topology,and the three-dimensional and plane field simulation techniques are comprehensively applied to improve the circuit simulation accuracy.Under the conditions of 33-37 GHz frequency bandwidth,24 V bias and pulse wave usage,the saturated output power of the chip is greater than 44 dBm,and the power added efficiency is higher than 26%.