电子束蒸发沉积高硼硅玻璃封装发光二极管(LED)可行性探讨

Discussion on Feasibility of Encapsulation of Light Emitting Diode(LED)with High Borosilicate Glass by Electron Beam Evaporation Deposition

综述了LED微透镜现用封装材料环氧树脂和有机硅树脂的不足,分析了采用高硼硅玻璃封装LED透镜的优势,提出采用双坩埚、以高纯SiO_(2)和B_(2)O_(3)为原料,电子枪采用不同的加速电压、蒸发束流、蒸发源合理配比、离子源辅助沉积等技术方法,实现温度低于300℃以下,用电子束蒸发沉积制作高硼硅玻璃微透镜封装层的可行性,可为LED以及其它半导体封装和结构设计提供新思路。

The shortcomings of epoxy resin and silicone resin used as encapsulation materials for LED microlens were reviewed.The advantages of using high borosilicate glass to encapsulate LED lens ware analyzed.The technology of double crucible,high purity SiO_(2) and B_(2)O_(3) as raw materials,different accelerating voltage,evaporation beam,reasonable ratio of evaporation source and ion source assisted deposition of electron gun were proposed.The feasibility of fabricating high-borosilicate glass microlens encapsulating layer by electron beam evaporation deposition at temperatures below 300℃ ware realized.This technology can provide a new idea for the encapsulation and structure design of LED and other semiconductors.